MEMS-based RF switch : -0,5dB insertion loss achieved at 50GHz

Ever since 2007, DelfMEMS has continuously improved the RF performance of its proprietary  anchorless ohmic MEMS switch technology, in line with the company road map. In 2007, insertion losses were  -0,6dB @ 2GHz  and -1,6dB @ 10GHz , to be compared with the current -0,12dB @ 2GHz and -0,5dB @ 50 GHz. Isolation was -20dB @ 2GHz in 2007, to be compared with -50dB @ 2GHz in 2010. These results, combined with the above-IC compatibility,  will enable us to offer an industrial solution in response to technical and cost challenges facing the ATE, Instrumentation, Aerospace and Mobile device industries.