Hot switching: key to ensuring successful RF MEMS switching

Contrary to many discussions on MEMS switches, their reliability is not limited to handling a maximum RF input power of 4 Watt with an associated 1 Billion life-cycle time. Many applications only require 10 to 20 dBM with a life-cycle time somewhere between 1 and 100 Million. The main issue lies in the membrane pull-out forces, as parasitic capacities in the surrounding circuit cause otherwise impressively high performing MEMS switches to fail due to stiction. DelfMEMS is leading the way with its innovative patented MEMS structure, which provides an active hot switching capability. Our devices currently handle 1V, 100mA hot switching with 15V actuation. DelfMEMS has joined SIPCOM, a collaborative French R&D project, to raise the hot switching performance from 1V,100mA to 3V,100mA for future product generations.